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________________________________________________________________ _ maxim integrated products _ _ 1 for pricing, delivery, and ordering information, please contact maxim direct at 1-888-629-4642, or visit maxims website at www.maxim-ic.com. max19993 dual, sige, high-linearity, 1200mhz to 1700mhz downconversion mixer with lo buffer/switch 19-5307; rev 0; 6/10 general description the max19993 dual-channel downconverter is designed to provide 6.4db of conversion gain, +27dbm input ip3, 15.4dbm 1db input compression point, and a noise figure of 9.8db for 1200mhz to 1700mhz diversity receiver applications. with an optimized lo frequency range of 1000mhz to 1560mhz, this mixer is ideal for low-side lo injection architectures. high-side lo injection is supported by the max19993a, which is pin- pin and functionally compatible with the max19993. in addition to offering excellent linearity and noise performance, the max19993 also yields a high level of component integration. this device includes two double-balanced passive mixer cores, two lo buffers, a dual-input lo selectable switch, and a pair of differential if output amplifiers. integrated on-chip baluns allow for single-ended rf and lo inputs. the device requires a nominal lo drive of 0dbm and a typical supply current of 337ma at v cc = +5.0v or 275ma at v cc = +3.3v. the max19993 is pin compatible with the max9985/ m a x 1 9 9 8 5 a / m a x 9 9 9 5 / m a x 1 9 9 9 3 a / m a x 1 9 9 9 4 / max19994a/max19995/max19995a series of 700mhz to 2200mhz mixers and pin similar to the max19997a/ max19999 series of 1850mhz to 4000mhz mixers, making this entire family of downconverters ideal for applications where a common pcb layout is used across multiple frequency bands. the device is available in a 6mm x 6mm, 36-pin tqfn package with an exposed pad. electrical performance is guaranteed over the extended temperature range, from t c = -40 n c to +85 nc. applications wcdma/lte base stations wireless local loop fixed broadband wireless access private mobile radios military systems features s 1200mhz _ to _ 1700mhz _ rf _ frequency _ range s 1000mhz _ to _ 1560mhz _ lo _ frequency _ range s 50mhz _ to _ 500mhz _ if _ frequency _ range s 6.4db _ typical _ conversion _ gain s 9.8db _ typical _ noise _ figure s +27dbm _ typical _ input _ ip3 s 15.4dbm _ typical _ input _ 1db _ compression _ point s 72dbc _ typical _ 2rf _ - _ 2lo _ spurious _ rejection _ at _ p rf _ = _ -10dbm s dual _ channels _ ideal _ for _ diversity _ receiver _ applications s 47db _ typical _ channel-to-channel _ isolation s low _ -6dbm _ to _ +3dbm _ lo _ drive s integrated _ lo _ buffer s internal _ rf _ and _ lo _ baluns _ for _ single-ended _ inputs s built-in _ spdt _ lo _ switch _ with _ 57db _ lo-to-lo _ isolation _ and _ 50ns _ switching _ time s pin _ compatible _ with _ the _ max9985/19985a/ max9995/max19993a/max19994/max19994a/ max19995/max19995a _ series _ of _ 700mhz _ to _ 2200mhz _ mixers s pin _ similar _ to _ the _ max19997a/max19999 _ series _ of _ 1850mhz _ to _ 4000mhz _ mixers s single _ +5v _ or _ +3.3v _ supply s external _ current-setting _ resistors _ provide _ option _ for _ operating _ device _ in _ reduced-power/reduced- performance _ mode + denotes a lead(pb)-free/rohs-compliant package. * ep = exposed pad. t = tape and reel. ordering information part temp _ range pin-package MAX19993ETX+ -40n c to +85nc 36 tqfn-ep* MAX19993ETX+t -40n c to +85nc 36 tqfn-ep*
max19993 dual, sige, high-linearity, 1200mhz to 1700mhz downconversion mixer with lo buffer/switch 2 stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. v cc to gnd .......................................................... -0.3v to +5.5v lo1, lo2 to gnd .............................................................. q0.3v losel to gnd ......................................... -0.3v to (v cc + 0.3v) rfmain, rfdiv, and lo_ input power ........................ +15dbm rfmain, rfdiv current (rf is dc shorted to gnd through a balun) ............................................................. 50ma tapmain, tapdiv .................................................. -0.3v to +2v any other pins to gnd ............................ -0.3v to (v cc + 0.3v) continuous power dissipation (note 1) .............................. 8.7w b ja (notes 2, 3) ........................................................... +38nc/w b jc (notes 1, 3) ............................................................. 7.4nc/w operating temperature range (note 4) ... t c = -40 n c to +85 nc junction temperature ..................................................... +150nc storage temperature range ............................ -65n c to +150nc lead temperature (soldering, 10s) ................................ +300nc soldering temperature (reflow) ...................................... +260nc 5.0v _ supply _ dc _ electrical _ characteristics ( typical application circuit , v cc = 4.75v to 5.25v, no input ac signals. t c = -40 n c to +85 n c, r1 = r4 = 681 i , r2 = r5 = 1.82k i . typical values are at v cc = 5.0v, t c = +25 n c, unless otherwise noted. all parameters are production tested.) absolute _ maximum _ ratings note _ 1: based on junction temperature t j = t c + ( b jc x v cc x i cc ). this formula can be used when the temperature of the exposed pad is known while the device is soldered down to a pcb. see the applications information section for details. the junction temperature must not exceed +150 nc. note _ 2: junction temperature t j = t a + ( b ja x v cc x i cc ). this formula can be used when the ambient temperature of the pcb is known. the junction temperature must not exceed +150 nc. note _ 3: package thermal resistances were obtained using the method described in jedec specification jesd51-7, using a four- layer board. for detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial. note _ 4: t c is the temperature on the exposed pad of the package. t a is the ambient temperature of the device and pcb. 3.3v _ supply _ dc _ electrical _ characteristics ( typical application circuit , v cc = 3.0v to 3.6v, no input ac signals. t c = -40 n c to +85n c, r1 = r4 = 681 i , r2 = r5 = 1.43k i. typical values are at v cc = 3.3v, t c = +25 n c, unless otherwise noted. parameters are guaranteed by design and not production tested.) parameter symbol conditions min typ max units supply voltage v cc 4.75 5 5.25 v supply current i cc total supply current 337 400 ma losel input high voltage v ih 2 v losel input low voltage v il 0.8 v losel input current i ih and i il -10 +10 fa parameter symbol conditions min typ max units supply voltage v cc 3.0 3.3 3.6 v supply current i cc total supply current (note 5) 275 ma losel input high voltage v ih 2 v losel input low voltage v il 0.8 v
max19993 dual, sige, high-linearity, 1200mhz to 1700mhz downconversion mixer with lo buffer/switch 3 recommended _ ac _ operating _ conditions 5.0v _ supply, _ low-side _ injection _ ac _ electrical _ characteristics ( typical application circuit (see table 1). r1 = r4 = 681 i , r2 = r5 = 1.82k i , v cc = 4.75v to 5.25v, rf and lo ports are driven from 50i sources, p lo = -6dbm to +3dbm, p rf = -5dbm, f rf = 1200mhz to 1700mhz, f lo = 1060mhz to 1560mhz, f if = 140mhz, f rf > f lo , t c = -40 n c to +85n c. typical values are at v cc = +5.0v, p rf = -5dbm, p lo = 0dbm, f rf = 1450mhz, f lo = 1310mhz, f if = 140mhz, t c = +25 n c. all parameters are guaranteed by design and characterization, unless otherwise noted.) (note 7) parameter symbol conditions min typ max units rf frequency f rf (note 6) 1200 1700 mhz lo frequency f lo (note 6) 1000 1560 mhz if frequency f if using mini-circuits tc4-1w-17 4:1 trans - former as defined in the typical application circuit , if matching components affect the if frequency range (note 6) 100 500 mhz using mini-circuits tc4-1w-7a 4:1 trans - former as defined in the typical application circuit , if matching components affect the if frequency range (note 6) 50 250 lo drive level p lo (note 6) -6 +3 dbm parameter symbol conditions min typ max units conversion gain (note 5) g c 4.5 6.4 7.4 db t c = +25 nc 5.1 6.4 7.0 t c = +25 n c, f rf = 1427mhz to 1463mhz 5.2 6.4 6.9 conversion gain flatness dg c f rf = 1427mhz to 1463mhz q0.03 db gain variation over temperature tc cg t c = -40 n c to +85 nc -0.009 db/nc input compression point ip 1db f rf = 1450mhz (notes 5, 8) 12.9 15.4 dbm input third-order intercept point iip3 f rf1 - f rf2 = 1mhz, p rf = -5dbm per tone 24.0 27.0 dbm f rf1 - f rf2 = 1mhz, p rf = -5dbm per tone, f rf = 1427mhz to 1463mhz, t c = +25 nc (note 5) 24.8 27.0 f rf1 - f rf2 = 1mhz, p rf = -5dbm per tone, f rf = 1427mhz to 1463mhz (note 5) 24.4 27.0 input third-order intercept point variation over temperature tc iip3 f rf1 - f rf2 = 1mhz, p rf = -5dbm per tone, t c = -40 n c to +85 nc q0.5 dbm noise figure (note 9) nf ssb single sideband, no blockers present 9.8 12.7 db f rf = 1427mhz to 1463mhz, t c = +25 nc, p lo = 0dbm, single sideband, no blockers present 9.8 11.0 f rf = 1427mhz to 1463mhz, p lo = 0dbm, single sideband, no blockers present 9.8 12.0
max19993 dual, sige, high-linearity, 1200mhz to 1700mhz downconversion mixer with lo buffer/switch 4 5.0v _ supply, _ low-side _ injection _ ac _ electrical _ characteristics _ (continued) ( typical application circuit (see table 1). r1 = r4 = 681 i , r2 = r5 = 1.82k i , v cc = 4.75v to 5.25v, rf and lo ports are driven from 50i sources, p lo = -6dbm to +3dbm, p rf = -5dbm, f rf = 1200mhz to 1700mhz, f lo = 1060mhz to 1560mhz, f if = 140mhz, f rf > f lo , t c = -40 n c to +85n c. typical values are at v cc = +5.0v, p rf = -5dbm, p lo = 0dbm, f rf = 1450mhz, f lo = 1310mhz, f if = 140mhz, t c = +25 n c. all parameters are guaranteed by design and characterization, unless otherwise noted.) (note 7) parameter symbol conditions min typ max units noise figure temperature coefficient tc nf single sideband, no blockers present, t c = -40 n c to +85 nc 0.016 db/nc noise figure with blocker nf b p blocker = +8dbm, f rf = 1450mhz, f lo = 1310mhz, f blocker = 1550mhz, p lo = 0dbm, v cc = 5.0v, t c = +25 o c (notes 9, 10) 21.0 22.8 db 2rf - 2lo spur rejection (note 9) 2x2 f rf = 1450mhz, f lo = 1310mhz, f spur = 1380mhz p rf = -10dbm 58 72 dbc p rf = -5dbm 53 67 f rf = 1450mhz, f lo = 1310mhz, f spur = 1380mhz, p lo = 0dbm, v cc = 5.0v, t c = +25 o c p rf = -10dbm 61 72 dbc p rf = -5dbm 56 67 3rf - 3lo spur rejection (note 9) 3x3 f rf = 1450mhz, f lo = 1310mhz, f spur = 1356.67mhz p rf = -10dbm 77 93 dbc p rf = -5dbm 67 83 f rf = 1450mhz, f lo = 1310mhz, f spur = 1356.67mhz, p lo = 0dbm, v cc = 5.0v, t c = +25 o c p rf = -10dbm 82 93 dbc p rf = -5dbm 72 83 rf input return loss lo and if terminated into matched impedance, lo on 21 db lo input return loss lo port selected, rf and if terminated into matched impedance 24 db lo port unselected, rf and if terminated into matched impedance 27 if output impedance z if nominal differential impedance of the if outputs 200 i if output return loss rf terminated into 50 i , lo driven by 50i source, if transformed to 50 i using external components shown in the typical application circuit 15 db rf-to-if isolation (note 5) 33 db lo leakage at rf port -38 dbm 2lo leakage at rf port -27 dbm
max19993 dual, sige, high-linearity, 1200mhz to 1700mhz downconversion mixer with lo buffer/switch 5 5.0v _ supply, _ low-side _ injection _ ac _ electrical _ characteristics _ (continued) ( typical application circuit (see table 1). r1 = r4 = 681 i , r2 = r5 = 1.82k i , v cc = 4.75v to 5.25v, rf and lo ports are driven from 50i sources, p lo = -6dbm to +3dbm, p rf = -5dbm, f rf = 1200mhz to 1700mhz, f lo = 1060mhz to 1560mhz, f if = 140mhz, f rf > f lo , t c = -40 n c to +85n c. typical values are at v cc = +5.0v, p rf = -5dbm, p lo = 0dbm, f rf = 1450mhz, f lo = 1310mhz, f if = 140mhz, t c = +25 n c. all parameters are guaranteed by design and characterization, unless otherwise noted.) (note 7) 3.3v _ supply, _ low _ side _ injection _ ac _ electrical _ characteristics ( typical application circuit (see table 1). r1 = r4 = 681i , r2 = r5 = 1.43ki . typical values are at v cc = 3.3v, p rf = -5dbm, p lo = 0dbm, f rf = 1450mhz, f lo = 1310mhz, f if = 140mhz, t c = +25 n c, unless otherwise noted.) (note 7) parameter symbol conditions min typ max units lo leakage at if port (note 5) -18 dbm channel isolation (note 5) rfmain converted power measured at ifdiv relative to ifmain, all unused ports terminated to 50 i 43 47 db rfdiv converted power measured at ifmain relative to ifdiv, all unused ports terminated to 50 i 43 47 lo-to-lo isolation p lo1 = +3dbm, p lo2 = +3dbm, f lo1 = 1310mhz, f lo2 = 1311mhz (note 5) 47 57 db lo switching time 50% of losel to if settled within 2 degrees 50 ns parameter symbol conditions min typ max units conversion gain g c (note 5) 6.2 db conversion gain flatness dg c f rf = 1427mhz to 1463mhz q0.05 db gain variation over temperature tc cg t c = -40 n c to +85 nc -0.009 db/nc input compression point ip 1db (note 8) 12.8 dbm input third-order intercept point iip3 f rf1 - f rf2 = 1mhz 24.4 dbm input third-order intercept point variation over temperature tc iip3 f rf1 - f rf2 = 1mhz, p rf = -5dbm per tone, t c = -40 n c to +85 nc q0.8 dbm noise figure nf ssb single sideband, no blockers present 9.8 db noise figure temperature coefficient tc nf single sideband, no blockers present, t c = -40 n c to +85 nc 0.016 db/nc 2rf - 2lo spur rejection 2 x 2 p rf = -10dbm 73 dbc p rf = -5dbm 68 3rf - 3lo spur rejection 3 x 3 p rf = -10dbm 80 dbc p rf = -5dbm 70 rf input return loss lo and if terminated into matched impedance, lo on 21 db lo input return loss lo port selected, rf and if terminated into matched impedance 24 db lo port unselected, rf and if terminated into matched impedance 27
max19993 dual, sige, high-linearity, 1200mhz to 1700mhz downconversion mixer with lo buffer/switch 6 note _ 5: 100% production tested for functionality. note _ 6: not production tested. operation outside this range is possible, but with degraded performance of some parameters. see the typical operating characteristics section. note _ 7: all limits reflect losses of external components, including a 0.5db loss at f if = 140mhz due to the 4:1 transformer. output measurements were taken at if outputs of the typical application circuit . note _ 8: maximum reliable continuous input power applied to the rf or if port of this device is +12dbm from a 50 i source. note _ 9: not production tested. note _ 10: measured with external lo source noise filtered so the noise floor is -174dbm/hz. this specification reflects the effects of all snr degradations in the mixer, including the lo noise as defined in application note 2021: specifications and measurement of local oscillator noise in integrated circuit base station mixers . 3.3v _ supply, _ low _ side _ injection _ ac _ electrical _ characteristics _ (continued) ( typical application circuit (see table 1). r1 = r4 = 681i , r2 = r5 = 1.43ki . typical values are at v cc = 3.3v, p rf = -5dbm, p lo = 0dbm, f rf = 1450mhz, f lo = 1310mhz, f if = 140mhz, t c = +25 n c, unless otherwise noted.) (note 7) parameter symbol conditions min typ max units if output return loss rf terminated into 50 i , lo driven by 50i source, if transformed to 50 i using external components shown in the typical application circuit 15 db rf-to-if isolation 33 db lo leakage at rf port -45 dbm 2lo leakage at rf port -27 dbm lo leakage at if port -22 dbm channel isolation rfmain converted power measured at ifdiv relative to ifmain, all unused ports terminated to 50 i 47 db rfdiv converted power measured at ifmain relative to ifdiv, all unused ports terminated to 50 i 47 lo-to-lo isolation p lo1 = +3dbm, p lo2 = +3dbm, f lo1 = 1310mhz, f lo2 = 1311mhz 57 db lo switching time 50% of losel to if settled within 2 degrees 50 ns
max19993 dual, sige, high-linearity, 1200mhz to 1700mhz downconversion mixer with lo buffer/switch 7 typical operating characteristics ( typical application circuit (see table 1). v cc _ = _ 5.0v , f rf > f lo for a 140mhz if, p rf = -5dbm, p lo = 0dbm, t c = +25c, unless otherwise noted.) conversion gain vs. rf frequency max19993 toc01 rf frequency (mhz) conversion gain (db) 1600 1500 1400 1300 5 6 7 8 4 1200 1700 t c = -40c t c = +85c t c = +25c conversion gain vs. rf frequency max19993 toc02 rf frequency (mhz) conversion gain (db) 1600 1500 1400 1300 5 6 7 8 4 1200 1700 p lo = -6dbm, -3dbm, 0dbm, +3dbm conversion gain vs. rf frequency max19993 toc03 rf frequency (mhz) conversion gain (db) 1600 1500 1400 1300 5 6 7 8 4 1200 1700 v cc = 4.75v, 5.0v, 5.25v input ip3 vs. rf frequency max19993 toc04 rf frequency (mhz) input ip3 (dbm) 1600 1500 1400 1300 26 27 28 25 1200 1700 p rf = -5dbm/tone t c = +85c t c = -40c t c = +25c input ip3 vs. rf frequency max19993 toc05 rf frequency (mhz) input ip3 (dbm) 1600 1500 1400 1300 26 27 28 25 1200 1700 p rf = -5dbm/tone p lo = -3dbm p lo = -6dbm p lo = +3dbm p lo = 0dbm input ip3 vs. rf frequency max19993 toc06 rf frequency (mhz) input ip3 (dbm) 1600 1500 1400 1300 26 27 28 25 1200 1700 p rf = -5dbm/tone v cc = 4.75v v cc = 5.25v v cc = 5.0v noise figure vs. rf frequency max19993 toc07 rf frequency (mhz) noise figure (db) 1600 1500 1400 1300 8 9 10 11 12 13 7 1200 1700 t c = +25c t c = -40c t c = +85c noise figure vs. rf frequency max19993 toc08 rf frequency (mhz) noise figure (db) 1600 1500 1400 1300 8 9 10 11 12 13 7 1200 1700 p lo = -6dbm, -3dbm, 0dbm, +3dbm noise figure vs. rf frequency max19993 toc09 rf frequency (mhz) noise figure (db) 1600 1500 1400 1300 8 9 10 11 12 13 7 1200 1700 v cc = 4.75v, 5.0v, 5.25v
max19993 dual, sige, high-linearity, 1200mhz to 1700mhz downconversion mixer with lo buffer/switch 8 typical operating characteristics (continued) ( typical application circuit (see table 1). v cc _ = _ 5.0v , f rf > f lo for a 140mhz if, p rf = -5dbm, p lo = 0dbm, t c = +25c, unless otherwise noted.) 2rf - 2lo response vs. rf frequency max19993 toc10 rf frequency (mhz) 2rf - 2lo response (dbc) 1600 1500 1400 1300 60 70 80 50 1200 1700 p rf = -5dbm t c = -40c t c = +85c t c = +25c 2rf - 2lo response vs. rf frequency max19993 toc11 rf frequency (mhz) 2rf - 2lo response (dbc) 1600 1500 1400 1300 60 70 80 50 1200 1700 p rf = -5dbm p lo = -3dbm p lo = +3dbm p lo = 0dbm p lo = -6dbm 2rf - 2lo response vs. rf frequency max19993 toc12 rf frequency (mhz) 2rf - 2lo response (dbc) 1600 1500 1400 1300 60 70 80 50 1200 1700 p rf = -5dbm v cc = 4.75v, 5.0v, 5.25v 3rf - 3lo response vs. rf frequency max19993 toc13 rf frequency (mhz) 3rf - 3lo response (dbc) 1600 1500 1400 1300 65 75 85 95 55 1200 1700 p rf = -5dbm t c = -40c t c = +85c t c = +25c 3rf - 3lo response vs. rf frequency max19993 toc14 rf frequency (mhz) 3rf - 3lo response (dbc) 1600 1500 1400 1300 65 75 85 95 55 1200 1700 p rf = -5dbm p lo = -3dbm p lo = +3dbm p lo = 0dbm p lo = -6dbm 3rf - 3lo response vs. rf frequency max19993 toc15 rf frequency (mhz) 3rf - 3lo response (dbc) 1600 1500 1400 1300 65 75 85 95 55 1200 1700 p rf = -5dbm v cc = 4.75v v cc = 5.0v v cc = 5.25v input p 1db vs. rf frequency max19993 toc16 rf frequency (mhz) input p 1db (dbm) 1600 1500 1400 1300 14 15 16 17 13 1200 1700 t c = -40c t c = +85c t c = +25c input p 1db vs. rf frequency max19993 toc17 rf frequency (mhz) input p 1db (dbm) 1600 1500 1400 1300 14 15 16 17 13 1200 1700 p lo = -6dbm, -3dbm, 0dbm, +3dbm input p 1db vs. rf frequency max19993 toc18 rf frequency (mhz) input p 1db (dbm) 1600 1500 1400 1300 14 15 16 17 13 1200 1700 v cc = 4.75v v cc = 5.25v v cc = 5.0v
max19993 dual, sige, high-linearity, 1200mhz to 1700mhz downconversion mixer with lo buffer/switch 9 typical operating characteristics (continued) ( typical application circuit (see table 1). v cc _ = _ 5.0v , f rf > f lo for a 140mhz if, p rf = -5dbm, p lo = 0dbm, t c = +25c, unless otherwise noted.) channel isolation vs. rf frequency max19993 toc19 rf frequency (mhz) channel isolation (db) 1600 1500 1400 1300 35 40 45 50 55 60 30 1200 1700 t c = -40c, +25c, +85c channel isolation vs. rf frequency max19993 toc20 rf frequency (mhz) channel isolation (db) 1600 1500 1400 1300 35 40 45 50 55 60 30 1200 1700 p lo = -6dbm, -3dbm, 0dbm, +3dbm channel isolation vs. rf frequency max19993 toc21 rf frequency (mhz) channel isolation (db) 1600 1500 1400 1300 35 40 45 50 55 60 30 1200 1700 v cc = 4.75v, 5.0v, 5.25v lo leakage at if port vs. lo frequency max19993 toc22 lo frequency (mhz) lo leakage at if port (dbm) 1460 1360 1260 1160 -30 -20 -10 0 -40 1060 1560 t c = -40c t c = +85c t c = +25c lo leakage at if port vs. lo frequency max19993 toc23 lo frequency (mhz) lo leakage at if port (dbm) 1460 1360 1260 1160 -30 -20 -10 0 -40 1060 1560 p lo = -3dbm p lo = -6dbm p lo = +3dbm p lo = 0dbm lo leakage at if port vs. lo frequency max19993 toc24 lo frequency (mhz) lo leakage at if port (dbm) 1460 1360 1260 1160 -30 -20 -10 0 -40 1060 1560 v cc = 4.75v v cc = 5.25v v cc = 5.0v rf-to-if isolation vs. rf frequency max19993 toc25 rf frequency (mhz) rf-to-if isolation (db) 1600 1500 1400 1300 30 40 50 20 1200 1700 t c = -40c t c = +85c t c = +25c rf-to-if isolation vs. rf frequency max19993 toc26 rf frequency (mhz) rf-to-if isolation (db) 1600 1500 1400 1300 30 40 50 20 1200 1700 p lo = -6dbm, -3dbm, 0dbm, +3dbm rf-to-if isolation vs. rf frequency max19993 toc27 rf frequency (mhz) rf-to-if isolation (db) 1600 1500 1400 1300 30 40 50 20 1200 1700 v cc = 4.75v, 5.0v, 5.25v
max19993 dual, sige, high-linearity, 1200mhz to 1700mhz downconversion mixer with lo buffer/switch 10 typical operating characteristics (continued) ( typical application circuit (see table 1). v cc _ = _ 5.0v , f rf > f lo for a 140mhz if, p rf = -5dbm, p lo = 0dbm, t c = +25c, unless otherwise noted.) lo leakage at rf port vs. lo frequency max19993 toc28 lo frequency (mhz) lo leakage at rf port (dbm) 1490 1380 1270 1160 -60 -50 -40 -30 -20 -70 1050 1600 t c = -40c t c = +85c t c = +25c lo leakage at rf port vs. lo frequency max19993 toc29 lo frequency (mhz) lo leakage at rf port (dbm) 1490 1380 1270 1160 -60 -50 -40 -30 -20 -70 1050 1600 p lo = -3dbm p lo = -6dbm p lo = +3dbm p lo = 0dbm lo leakage at rf port vs. lo frequency max19993 toc30 lo frequency (mhz) lo leakage at rf port (dbm) 1490 1380 1270 1160 -60 -50 -40 -30 -20 -70 1050 1600 v cc = 4.75v, 5.0v, 5.25v 2lo leakage at rf port vs. lo frequency max19993 toc31 lo frequency (mhz) 2lo leakage at rf port (dbm) 1490 1380 1270 1160 -50 -40 -30 -20 -10 -60 1050 1600 t c = -40c t c = +85c t c = +25c 2lo leakage at rf port vs. lo frequency max19993 toc32 lo frequency (mhz) 2lo leakage at rf port (dbm) 1490 1380 1270 1160 -50 -40 -30 -20 -10 -60 1050 1600 p lo = -3dbm p lo = -6dbm p lo = +3dbm p lo = 0dbm 2lo leakage at rf port vs. lo frequency max19993 toc33 lo frequency (mhz) 2lo leakage at rf port (dbm) 1490 1380 1270 1160 -50 -40 -30 -20 -10 -60 1050 1600 v cc = 4.75v v cc = 5.25v v cc = 5.0v lo switch isolation vs. lo frequency max19993 toc34 lo frequency (mhz) lo switch isolation (db) 1490 1380 1870 1160 50 60 70 40 1050 1600 t c = -40c t c = +85c t c = +25c lo switch isolation vs. lo frequency max19993 toc35 lo frequency (mhz) lo switch isolation (db) 1490 1380 1870 1160 50 60 70 40 1050 1600 p lo = -6dbm, -3dbm, 0dbm, +3dbm lo switch isolation vs. lo frequency max19993 toc36 lo frequency (mhz) lo switch isolation (db) 1490 1380 1870 1160 50 60 70 40 1050 1600 v cc = 4.75v, 5.0v, 5.25v
max19993 dual, sige, high-linearity, 1200mhz to 1700mhz downconversion mixer with lo buffer/switch 11 typical operating characteristics (continued) ( typical application circuit (see table 1). v cc _ = _ 5.0v , f rf > f lo for a 140mhz if, p rf = -5dbm, p lo = 0dbm, t c = +25c, unless otherwise noted.) rf port return loss vs. rf frequency max19993 toc37 rf frequency (mhz) rf port return loss (db) 1600 1500 1400 1300 25 20 15 10 5 0 30 1200 1700 if = 140mhz p lo = -6dbm, -3dbm, 0dbm, +3dbm if port return loss vs. if frequency max19993 toc38 if frequency (mhz) if port return loss (db) 410 320 230 140 25 20 15 10 5 0 30 50 500 v cc = 4.75v, 5.0v, 5.25v lo = 1560mhz lo = 1060mhz lo = 1310mhz lo selected port return loss vs. lo frequency max19993 toc39 lo frequency (mhz) lo selected port return loss (db) 1800 1600 1400 1200 30 20 10 0 40 1000 2000 p lo = -3dbm p lo = -6dbm p lo = +3dbm p lo = 0dbm lo unselected port return loss vs. lo frequency max19993 toc40 lo frequency (mhz) lo unselected port return loss (db) 1800 1600 1400 1200 40 30 20 10 0 50 1000 2000 p lo = -6dbm, -3dbm, 0dbm, +3dbm supply current vs. temperature (t c ) max19993 toc41 temperature (c) supply current (ma) 60 35 10 -15 320 330 340 350 360 370 310 -40 85 v cc = 4.75v v cc = 5.25v v cc = 5.0v
max19993 dual, sige, high-linearity, 1200mhz to 1700mhz downconversion mixer with lo buffer/switch 12 typical operating characteristics (continued) ( typical application circuit (see table 1). v cc _ = _ 3.3v , f rf > f lo for a 140mhz if, p rf = -5dbm, p lo = 0dbm, t c = +25c, unless otherwise noted.) input ip3 vs. rf frequency max19993 toc46 rf frequency (mhz) input ip3 (dbm) 1600 1500 1400 1300 22 23 24 25 26 27 21 1200 1700 v cc = 3.3v p rf = -5dbm/tone p lo = +3dbm p lo = -6dbm p lo = -3dbm p lo = 0dbm input ip3 vs. rf frequency max19993 toc47 rf frequency (mhz) input ip3 (dbm) 1600 1500 1400 1300 22 23 24 25 26 27 21 1200 1700 p rf = -5dbm/tone v cc = 3.0v v cc = 3.6v v cc = 3.3v noise figure vs. rf frequency max19993 toc48 rf frequency (mhz) noise figure (db) 1600 1500 1400 1300 8 9 10 11 12 13 7 1200 1700 t c = -40c t c = +85c t c = +25c v cc = 3.3v noise figure vs. rf frequency max19993 toc49 rf frequency (mhz) noise figure (db) 1600 1500 1400 1300 8 9 10 11 12 13 7 1200 1700 v cc = 3.3v p lo = -6dbm, -3dbm, 0dbm, +3dbm noise figure vs. rf frequency max19993 toc50 rf frequency (mhz) noise figure (db) 1600 1500 1400 1300 8 9 10 11 12 13 7 1200 1700 v cc = 3.0v, 3.3v, 3.6v conversion gain vs. rf frequency max19993 toc42 rf frequency (mhz) conversion gain (db) 1600 1500 1400 1300 5 6 7 8 4 1200 1700 t c = -40c t c = +85c t c = +25c v cc = 3.3v conversion gain vs. rf frequency max19993 toc43 rf frequency (mhz) conversion gain (db) 1600 1500 1400 1300 5 6 7 8 4 1200 1700 v cc = 3.3v p lo = -6dbm, -3dbm, 0dbm, +3dbm conversion gain vs. rf frequency max19993 toc44 rf frequency (mhz) conversion gain (db) 1600 1500 1400 1300 5 6 7 8 4 1200 1700 v cc = 3.0v v cc = 3.6v v cc = 3.3v input ip3 vs. rf frequency max19993 toc45 rf frequency (mhz) input ip3 (dbm) 1600 1500 1400 1300 22 23 24 25 26 27 21 1200 1700 t c = -40c t c = +85c t c = +25c v cc = 3.3v p rf = -5dbm/tone
max19993 dual, sige, high-linearity, 1200mhz to 1700mhz downconversion mixer with lo buffer/switch 13 typical operating characteristics (continued) ( typical application circuit (see table 1). v cc _ = _ 3.3v , f rf > f lo for a 140mhz if, p rf = -5dbm, p lo = 0dbm, t c +25c, unless otherwise noted.) 2rf - 2lo response vs. rf frequency max19993 toc51 rf frequency (mhz) 2rf - 2lo response (dbc) 1600 1500 1400 1300 60 70 80 50 1200 1700 t c = -40c t c = +85c t c = +25c v cc = 3.3v p rf = -5dbm 2rf - 2lo response vs. rf frequency max19993 toc52 rf frequency (mhz) 2rf - 2lo response (dbc) 1600 1500 1400 1300 60 70 80 50 1200 1700 v cc = 3.3v p rf = -5dbm p lo = -3dbm p lo = -6dbm p lo = +3dbm p lo = 0dbm 2rf - 2lo response vs. rf frequency max19993 toc53 rf frequency (mhz) 2rf - 2lo response (dbc) 1600 1500 1400 1300 60 70 80 50 1200 1700 p rf = -5dbm v cc = 3.6v v cc = 3.3v v cc = 3.0v 3rf - 3lo response vs. rf frequency max19993 toc54 rf frequency (mhz) 3rf - 3lo response (dbc) 1600 1500 1400 1300 65 75 85 55 1200 1700 t c = +85c t c = -40c t c = +25c v cc = 3.3v p rf = -5dbm 3rf - 3lo response vs. rf frequency max19993 toc55 rf frequency (mhz) 3rf - 3lo response (dbc) 1600 1500 1400 1300 65 75 85 55 1200 1700 v cc = 3.3v p rf = -5dbm p lo = -6dbm, -3dbm, 0dbm, +3dbm 3rf - 3lo response vs. rf frequency max19993 toc56 rf frequency (mhz) 3rf - 3lo response (dbc) 1600 1500 1400 1300 65 75 85 55 1200 1700 p rf = -5dbm v cc = 3.6v v cc = 3.3v v cc = 3.0v input p 1db vs. rf frequency max19993 toc57 rf frequency (mhz) input p 1db (dbm) 1600 1500 1400 1300 11 12 13 14 15 10 1200 1700 t c = +85c t c = -40c t c = +25c v cc = 3.3v input p 1db vs. rf frequency max19993 toc58 rf frequency (mhz) input p 1db (dbm) 1600 1500 1400 1300 11 12 13 14 15 10 1200 1700 v cc = 3.3v p lo = -6dbm, -3dbm, 0dbm, +3dbm input p 1db vs. rf frequency max19993 toc59 rf frequency (mhz) input p 1db (dbm) 1600 1500 1400 1300 11 12 13 14 15 10 1200 1700 v cc = 3.0v v cc = 3.6v v cc = 3.3v
max19993 dual, sige, high-linearity, 1200mhz to 1700mhz downconversion mixer with lo buffer/switch 14 typical operating characteristics (continued) ( typical application circuit (see table 1). v cc _ = _ 3.3v , f rf > f lo for a 140mhz if, p rf = -5dbm, p lo = 0dbm, t c +25c, unless otherwise noted.) lo leakage at if port vs. lo frequency max19993 toc64 lo frequency (mhz) lo leakage at if port (dbm) 1460 1360 1260 1160 -30 -20 -10 -40 1060 1560 v cc = 3.3v p lo = -6dbm, -3dbm, 0dbm, +3dbm lo leakage at if port vs. lo frequency max19993 toc65 lo frequency (mhz) lo leakage at if port (dbm) 1460 1360 1260 1160 -30 -20 -10 -40 1060 1560 v cc = 3.0v v cc = 3.6v v cc = 3.3v rf-to-if isolation vs. rf frequency max19993 toc66 rf frequency (mhz) rf-to-if isolation (db) 1600 1500 1400 1300 30 40 50 20 1200 1700 t c = +85c t c = -40c t c = +25c v cc = 3.3v rf-to-if isolation vs. rf frequency max19993 toc67 rf frequency (mhz) rf-to-if isolation (db) 1600 1500 1400 1300 30 40 50 20 1200 1700 v cc = 3.3v p lo = -6dbm, -3dbm, 0dbm, +3dbm rf-to-if isolation vs. rf frequency max19993 toc68 rf frequency (mhz) rf-to-if isolation (db) 1600 1500 1400 1300 30 40 50 20 1200 1700 v cc = 3.0v, 3.3v, 3.6v channel isolation vs. rf frequency max19993 toc61 rf frequency (mhz) channel isolation (db) 1600 1500 1400 1300 45 50 55 40 1200 1700 v cc = 3.3v p lo = -6dbm, -3dbm, 0dbm, +3dbm channel isolation vs. rf frequency max19993 toc62 rf frequency (mhz) channel isolation (db) 1600 1500 1400 1300 45 50 55 40 1200 1700 v cc = 3.0v, 3.3v, 3.6v lo leakage at if port vs. lo frequency max19993 toc63 lo frequency (mhz) lo leakage at if port (dbm) 1460 1360 1260 1160 -30 -20 -10 -40 1060 1560 t c = +85c t c = -40c t c = +25c v cc = 3.3v channel isolation vs. rf frequency max19993 toc60 rf frequency (mhz) channel isolation (db) 1600 1500 1400 1300 45 50 55 40 1200 1700 t c = -40c t c = +25c t c = +85c v cc = 3.3v
max19993 dual, sige, high-linearity, 1200mhz to 1700mhz downconversion mixer with lo buffer/switch 15 typical operating characteristics (continued) ( typical application circuit (see table 1). v cc _ = _ 3.3v , f rf > f lo for a 140mhz if, p rf = -5dbm, p lo = 0dbm, t c +25c, unless otherwise noted.) lo leakage at rf port vs. lo frequency max19993 toc70 lo frequency (mhz) lo leakage at rf port (dbm) 1490 1380 1270 1160 -60 -50 -40 -30 -20 -70 1050 1600 v cc = 3.3v p lo = -3dbm p lo = -6dbm p lo = +3dbm p lo = 0dbm lo leakage at rf port vs. lo frequency max19993 toc71 lo frequency (mhz) lo leakage at rf port (dbm) 1490 1380 1270 1160 -60 -50 -40 -30 -20 -70 1050 1600 v cc = 3.0v v cc = 3.6v v cc = 3.3v 2lo leakage at rf port vs. lo frequency max19993 toc72 lo frequency (mhz) 2lo leakage at rf port (dbm) 1490 1380 1270 1160 -50 -40 -30 -20 -10 -60 1050 1600 v cc = 3.3v t c = +85c t c = -40c t c = +25c 2lo leakage at rf port vs. lo frequency max19993 toc73 lo frequency (mhz) 2lo leakage at rf port (dbm) 1490 1380 1270 1160 -50 -40 -30 -20 -10 -60 1050 1600 v cc = 3.3v p lo = -3dbm p lo = -6dbm p lo = +3dbm p lo = 0dbm 2lo leakage at rf port vs. lo frequency max19993 toc74 lo frequency (mhz) 2lo leakage at rf port (dbm) 1490 1380 1270 1160 -50 -40 -30 -20 -10 -60 1050 1600 v cc = 3.0v v cc = 3.6v v cc = 3.3v lo switch isolation vs. lo frequency max19993 toc75 lo frequency (mhz) lo switch isolation (db) 1490 1380 1270 1160 50 60 70 40 1050 1600 v cc = 3.3v t c = +85c t c = -40c t c = +25c lo switch isolation vs. lo frequency max19993 toc76 lo frequency (mhz) lo switch isolation (db) 1490 1380 1270 1160 50 60 70 40 1050 1600 v cc = 3.3v p lo = -6dbm, -3dbm, 0dbm, +3dbm lo switch isolation vs. lo frequency max19993 toc77 lo frequency (mhz) lo switch isolation (db) 1490 1380 1270 1160 50 60 70 40 1050 1600 v cc = 3.0v, 3.3v, 3.6v lo leakage at rf port vs. lo frequency max19993 toc69 lo frequency (mhz) lo leakage at rf port (dbm) 1490 1380 1270 1160 -60 -50 -40 -30 -20 -70 1050 1600 v cc = 3.3v t c = +85c t c = -40c t c = +25c
max19993 dual, sige, high-linearity, 1200mhz to 1700mhz downconversion mixer with lo buffer/switch 16 typical operating characteristics (continued) ( typical application circuit (see table 1). v cc _ = _ 3.3v , f rf > f lo for a 140mhz if, p rf = -5dbm, p lo = 0dbm, t c +25c, unless otherwise noted.) lo unselected port return loss vs. lo frequency max19993 toc81 lo frequency (mhz) lo unselected port return loss (db) 1800 1600 1400 1200 40 30 20 10 0 50 1000 2000 v cc = 3.3v p lo = -6dbm, -3dbm, 0dbm, +3dbm supply current vs. temperature (t c ) max19993 toc82 temperature (c) supply current (ma) 60 35 10 -15 250 260 270 280 290 300 310 240 -40 85 v cc = 3.0v v cc = 3.6v v cc = 3.3v rf port return loss vs. rf frequency max19993 toc78 rf frequency (mhz) rf port return loss (db) 1600 1500 1400 1300 25 20 15 10 5 0 30 1200 1700 p lo = -6dbm, -3dbm, 0dbm, +3dbm v cc = 3.3v if = 140mhz if port return loss vs. if frequency max19993 toc79 if frequency (mhz) if port return loss (db) 410 320 230 140 15 10 5 0 20 50 500 v cc = 3.0v, 3.3v, 3.6v lo = 1560mhz lo = 1310mhz lo = 1060mhz lo selected port return loss vs. lo frequency max19993 toc80 lo frequency (mhz) lo selected port return loss (db) 1800 1600 1400 1200 30 20 10 0 40 1000 2000 v cc = 3.3v p lo = -6dbm, -3dbm, 0dbm, +3dbm
max19993 dual, sige, high-linearity, 1200mhz to 1700mhz downconversion mixer with lo buffer/switch 17 pin configuration exposed pad exposed pad on the bottom of the package 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 v cc ifd_set gnd ifd+ ifd- ind_extd v cc lo_adj_d n.c. 192021222324252627 lo2 gnd gnd gnd losel gnd v cc gnd lo1 rfmain tapmain gnd v cc gnd v cc gnd tapdiv rfdiv 28 29 30 31 32 33 34 35 36 n.c. lo_adj_m v cc ind_extm ifm- ifm+ gnd ifm_set v cc tqfn (6mm 6mm) top view max19993 +
max19993 dual, sige, high-linearity, 1200mhz to 1700mhz downconversion mixer with lo buffer/switch 18 pin description pin name function 1 rfmain main channel rf input. internally matched to 50 i . requires an input dc-blocking capacitor. 2 tapmain main channel balun center tap. bypass to gnd with 39pf and 0.033 f f capacitors as close as possible to the pin with the smaller value capacitor closer to the part. 3, 5, 7, 12, 20, 22, 24, 25, 26, 34 gnd ground 4, 6, 10, 16, 21, 30, 36 v cc power supply. bypass to gnd with capacitors as close as possible to the pin, as shown in the typical application circuit . 8 tapdiv diversity channel balun center tap. bypass to gnd with 39pf and 0.033 f f capacitors as close as possible to the pin with the smaller value capacitor closer to the part. 9 rfdiv diversity channel rf input. internally matched to 50 i . requires an input dc-blocking capacitor. 11 ifd_set if diversity amplifier bias control. connect a resistor from this pin to ground to set the bias current for the diversity if amplifier. see the typical application circuit . 13, 14 ifd+, ifd- diversity mixer differential if output +/-. connect pullup inductors from each of these pins to v cc . see the typical application circuit . 15 ind_extd diversity external inductor connection. connect to ground through a 0 i resistor (0603) as close as possible to the pin. for improved rf-to-if and lo-to-if isolation, contact the factory for details. 17 lo_adj_d lo diversity amplifier bias control. connect a resistor from this pin to ground to set the bias current for the diversity lo amplifier. see the typical application circuit . 18, 28 n.c. no connection. not internally connected. 19 lo1 local oscillator 1 input. this input is internally matched to 50 i . requires an input dc-blocking capacitor. 23 losel local oscillator select. set this pin to high to select lo1. set to low to select lo2. 27 lo2 local oscillator 2 input. this input is internally matched to 50 i . requires an input dc-blocking capacitor. 29 lo_adj_m lo main amplifier bias control. connect a resistor from this pin to ground to set the bias current for the main lo amplifier. see the typical application circuit . 31 ind_extm main external inductor connection. connect to ground through a 0 i resistor (0603) as close as possible to the pin. for improved rf-to-if and lo-to-if isolation, contact the factory for details. 32, 33 ifm-, ifm+ main mixer differential if output -/+. connect pullup inductors from each of these pins to v cc . see the typical application circuit . 35 ifm_set if main amplifier bias control. connect a resistor from this pin to ground to set the bias current for the main if amplifier. see the typical application circuit . ep exposed pad. internally connected to gnd. solder this exposed pad to a pcb pad that uses mul - tiple ground vias to provide heat transfer out of the device into the pcb ground planes. these mul - tiple ground vias are also required to achieve the noted rf performance.
max19993 dual, sige, high-linearity, 1200mhz to 1700mhz downconversion mixer with lo buffer/switch 19 detailed description the max19993 is a dual-channel downconverter designed to provide up to 6.4db of conversion gain, +27dbm input ip3, 15.4dbm 1db input compression point, and a noise figure of 9.8db. in addition to its high-linearity performance, the device achieves a high level of component integration. it inte - grates two double-balanced mixers for two-channel downconversion. both the main and diversity channels include a balun and matching circuitry to allow 50 i single-ended interfaces to the rf ports and the two lo ports. an integrated single-pole/double-throw (spdt) switch provides 50ns switching time between the two lo inputs with 57db of lo-to-lo isolation and -38dbm of lo leakage at the rf port. furthermore, the integrated lo buffers provide a high drive level to each mixer core, reducing the lo drive required at the devices inputs to a range of -6dbm to +3dbm. the if ports for both channels incorporate differential outputs for downcon - version, which is ideal for providing enhanced 2rf - 2lo performance. the device is specified to operate over an rf input range of 1200mhz to 1700mhz, an lo range of 1000mhz to 1560mhz, and an if range of 50mhz to 500mhz. the external if components set the lower frequency range. see the typical operating characteristics section for details. operation beyond these ranges is possible; see the typical operating characteristics section for additional information. although this device is optimized for low- side lo injection applications, it can operate in high- side lo injection modes as well. however, perfor - mance degrades as f lo continues to increase. contact the factory for a variant with increased high-side lo performance. rf port and balun the rf input ports of both the main and diversity channels are internally matched to 50 i , requiring no external matching components. a dc-blocking capacitor is required as the input is internally dc shorted to ground through the on-chip balun. the rf port input return loss is typically better than 19db over the 1400mhz to 1700mhz rf frequency range. lo inputs, buffer, and balun the device is optimized for a 1000mhz to 1560mhz lo frequency range. as an added feature, the device includes an internal lo spdt switch for use in frequency- hopping applications. the switch selects one of the two single-ended lo ports, allowing the external oscillator to settle on a particular frequency before it is switched in. lo switching time is typically 50ns, which is more than adequate for typical gsm applications. if frequency hopping is not employed, simply set the switch to either of the lo inputs. the switch is controlled by a digital input (losel), where logic-high selects lo1 and logic-low selects lo2. lo1 and lo2 inputs are internally matched to 50 i , requiring only 39pf dc-blocking capacitors. if losel is connected directly to a logic source, then voltage must be applied to v cc before digital logic is applied to losel to avoid damaging the part. alternatively, a 1k i resistor can be placed in series at the losel to limit the input current in applications where losel is applied before v cc . the main and diversity channels incorporate a two-stage lo buffer that allows for a wide-input power range for the lo drive. the on-chip low-loss baluns, along with lo buffers, drive the double-balanced mixers. all interfacing and matching components from the lo inputs to the if outputs are integrated on-chip. high-linearity mixer the core of the devices dual-channel downconverter consists of two double-balanced, high-performance passive mixers. exceptional linearity is provided by the large lo swing from the on-chip lo buffers. when combined with the integrated if amplifiers, the cascaded iip3, 2rf - 2lo rejection, and noise-figure performance are typically +27dbm, 72dbc, and 9.8db, respectively. differential if the device has a 50mhz to 500mhz if frequency range, where the low-end frequency depends on the frequency response of the external if components. note that these differential ports are ideal for providing enhanced iip2 performance. single-ended if applications require a 4:1 (impedance ratio) balun to transform the 200 i differential if impedance to a 50 i single-ended system. after the balun, the return loss is typically 15db. the user can use a differential if amplifier on the mixer if ports, but a dc block is required on both ifd+/ifd- and ifm+/ ifm- ports to keep external dc from entering the if ports of the mixer.
max19993 dual, sige, high-linearity, 1200mhz to 1700mhz downconversion mixer with lo buffer/switch 20 applications information input and output matching the rf and lo inputs are internally matched to 50 i. no matching components are required. the rf port input return loss is typically better than 19db over the 1400mhz to 1700mhz rf frequency range and return loss at the lo ports are typically better than 15db over the entire lo range. rf and lo inputs require only dc-blocking capacitors for interfacing. the if output impedance is 200 i (differential). for evaluation, an external low-loss 4:1 (impedance ratio) balun transforms this impedance to a 50 i single-ended output. see the typical application circuit . reduced-power mode each channel of the device has two pins (lo_adj_d/ lo_adj_m, ifd_set/ifm_set) that allow external resistors to set the internal bias currents. nominal values for these resistors are given in table 1. larger value resistors can be used to reduce power dissipation at the expense of some performance loss. if q 1% resistors are not readily available, substitute with q 5% resistors. significant reductions in power consumption can also be realized by operating the mixer with an optional 3.3v supply voltage. doing so reduces the overall power consumption by approximately 46%. see the 3.3v supply ac electrical characteristics table and the relevant 3.3v curves in the typical operating characteristics section. ind_ext_ inductors the default application circuit calls for connecting ind_ext_ (pins 15 and 31) to ground through a 0 i resistor (0603) as close as possible to the pin. for improved rf-to-if and lo-to-if isolation, contact the factory for details. layout considerations a properly designed pcb is an essential part of any rf/microwave circuit. keep rf signal lines as short as possible to reduce losses, radiation, and inductance. the load impedance presented to the mixer must be such that any capacitance from both if- and if+ to ground does not exceed several picofarads. for the best performance, route the ground pin traces directly to the exposed pad under the package. the pcb exposed pad must be connected to the ground plane of the pcb. it is suggested that multiple vias be used to connect this pad to the lower-level ground planes. this method provides a good rf/thermal-conduction path for the device. solder the exposed pad on the bottom of the device package to the pcb. the max19993 evaluation kit can be used as a reference for board layout. gerber files are available upon request at www.maxim-ic.com. power-supply bypassing proper voltage-supply bypassing is essential for high- frequency circuit stability. bypass each v cc pin and tapmain/tapdiv with the capacitors shown in the typical application circuit . see table 1 for component values. place the tapmain/tapdiv bypass capacitors to ground within 100 mils of the pin. exposed pad rf/thermal considerations the exposed pad (ep) of the max19993s 36-pin tqfn- ep package provides a low thermal-resistance path to the die. it is important that the pcb on which the device is mounted be designed to conduct heat from the ep. in addition, provide the ep with a low-inductance path to electrical ground. the ep must be soldered to a ground plane on the pcb, either directly or through an array of plated via holes.
max19993 dual, sige, high-linearity, 1200mhz to 1700mhz downconversion mixer with lo buffer/switch 21 table _ 1. _ component _ values typical application circuit v cc ifd_set gnd ifd+ ifd- ind_extd v cc lo_adj_d n.c. lo2 gnd gnd gnd losel gnd v cc gnd lo1 rfmain tapmain gnd v cc gnd v cc gnd tapdiv rfdiv n.c. lo_adj_m v cc ind_extm ifm- ifm+ gnd ifm_set v cc v cc v cc v cc v cc v cc l7 l8 c2 c3 c4 c5 c6 c9 c18 t2 4:1 4:1 t1 r4 r1 l4 l5 l2 l1 l6 l3 c12 c10 c11 c21 c20 c19 c13 c17 c14 c16 c15 r6 r3 r5 r2 c7 c8 rf main input rf div input if div output if main output lo1 lo2 lo select c1 v cc exposed pad + 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 192021222324252627 28 29 30 31 32 33 34 35 36 max19993 v cc v cc v cc designation qty description component _ supplier c1, c2, c7, c8, c14, c16 6 39pf microwave capacitors (0402) murata electronics north america, inc. c3, c6 2 0.033f f microwave capacitors (0603) murata electronics north america, inc. c4, c5 2 0402, not used c9, c13, c15, c17, c18 5 0.01f f microwave capacitors (0402) murata electronics north america, inc.
max19993 dual, sige, high-linearity, 1200mhz to 1700mhz downconversion mixer with lo buffer/switch 22 chip information process: sige bicmos package information for the latest package outline information and land patterns, go to www.maxim-ic.com/packages . note that a +, #, or - in the package code indicates rohs status only. package drawings may show a different suffix character, but the drawing pertains to the package regardless of rohs status. package type package code outline no. land pattern 36 thin qfn-ep t3666+2 21-0141 90-0049 table _ 1. _ component _ values _ (continued) designation qty description component _ supplier c10, c11, c12, c19, c20, c21 6 150pf microwave capacitors (0603) murata electronics north america, inc. l1, l2, l4, l5 4 330nh wire-wound high-q inductors (0805) coilcraft, inc. l3, l6 2 0i resistors (0603). for improved rf-to-if and lo-to-if isolation, contact factory for details. digi-key corp. l7, l8 2 additional tuning elements (0402, not used) r1, r4 2 681i 1% resistors (0402). used for v cc _ = _ 5.0v applications. larger values can be used to reduce power at the expense of some performance loss. digi-key corp. 681i 1% resistors (0402). used for v cc _ = _ 3.3v applications. r2, r5 2 1.82ki 1% resistors (0402). used for v cc _ = _ 5.0v applications. larger values can be used to reduce power at the expense of some performance loss. digi-key corp. 1.43ki 1% resistors (0402). used for v cc _ = _ 3.3v applications. r3, r6 2 0i resistors (1206) digi-key corp. t1, t2 2 4:1 transformers (200:50) tc4-1w-7a mini-circuits u1 1 max19993 ic (36 tqfn-ep) maxim integrated products, inc.
maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a maxim product. no circuit patent licenses are implied. maxim reserves the right to change the circuitry and specifications without notice at any time. maxim integrated products, 120 san gabriel drive, sunnyvale, ca 94086 408-737-7600 23 ? 2010 maxim integrated products maxim is a registered trademark of maxim integrated products, inc. max19993 dual, sige, high-linearity, 1200mhz to 1700mhz downconversion mixer with lo buffer/switch revision history revision number revision date description pages changed 0 6/10 initial release

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